BSP171PL Manufacturer, Function, Datasheet

Manufacturer	Part #	Datasheet Date Size	Description	Rohs Pb Free Lifecycle	Direct Link
NXP Semiconductors	BSP100 /T3		N-channel enhancement mode TrenchMOS (tm) transistor - Configuration: Single N-channel ; I_D DC: 6 A; Q_gd (typ): 0.7 nC; R_DS(on): 100@10V200@4.5V mOhm; V_DSmax: 30 V	compliant no active
	BSP122 T/R		N-channel enhancement mode vertical D-MOS transistor - Configuration: Single N-channel ; I_D DC: 0.55 A; R_DS(on): 2500@10V mOhm; V_DSmax: 200 V	compliant no active
	BSP126 T/R		N-channel enhancement mode vertical D-MOS transistor - Configuration: Single N-channel ; I_D DC: 0.375 A; R_DS(on): 5000@10V mOhm; V_DSmax: 250 V	compliant no active
	BSP130 T/R		N-channel enhancement mode vertical D-MOS transistor - Configuration: Single N-channel ; I_D DC: 0.3 A; R_DS(on): 8000@10V mOhm; V_DSmax: 300 V	compliant no active
	BSP130,135		N-channel vertical D-MOS logic level FET SC-73 4-Pin	active
Nexperia	BSP130,135		N-channel vertical D-MOS logic level FET@en-us SC-73 4-Pin	active
onsemi	BSP16T1		High Voltage PNP Bipolar Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL	no obsolete
onsemi	BSP16T1G		High Voltage PNP Bipolar Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL	yes active
NXP Semiconductors	BSP19 T/R		NPN high-voltage transistors - fT min: 70 MHz; hFE max:>40 ; hFE min: 40 ; I_C max: 50 mA; Polarity: NPN ; Ptot max: 1200 mW; VCEO max: 350 V	compliant no active
onsemi	BSP19AT1		NPN Bipolar Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL	no obsolete
onsemi	BSP19AT1G		NPN Bipolar Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL, Automotive Qualified	yes obsolete

BSP171PL Manufacturer

Link URL