BSH3-0-R Manufacturer, Function, Datasheet

Manufacturer	Part #	Datasheet Date Size	Description	Rohs Pb Free Lifecycle	Direct Link
NXP Semiconductors	BSH103 T/R		N-channel enhancement mode MOS transistor - Configuration: Single N-channel ; I_D DC: 0.85 A; Q_gd (typ): 0.67 nC; R_DS(on): 400@4.5V500@2.5V mOhm; V_DSmax: 30 V	compliant no active
	BSH105 T/R		N-channel enhancement mode MOS transistor - Configuration: Single N-channel ; I_D DC: 1.05 A; Q_gd (typ): 1.4 nC; R_DS(on): 200@4.5V250@2.5V mOhm; V_DSmax: 20 V	compliant no active
	BSH111BK/S500R		BSH111BK	transferred
	BSH111BKR		BSH111BK - 55 V, N-channel Trench MOSFET TO-236 3-Pin	transferred
	BSH121,115		N-channel TrenchMOS extremely low level FET SC-70 3-Pin	active
Nexperia	BSH121,115		N-channel TrenchMOS extremely low level FET@en-us SC-70 3-Pin	obsolete
NXP Semiconductors	BSH201 T/R		P-channel enhancement mode MOS transistor - Configuration: Single P-channel ; I_D DC: 0.3 A; Q_gd (typ): 0.4 nC; R_DS(on): 2500@10V3750@4.5V mOhm; V_DSmax: 60 V	compliant no active
NXP Semiconductors	BSH201,235		BSH201 - P-channel vertical D-MOS logic level FET TO-236 3-Pin	active
Nexperia	BSH201,235		BSH201 - P-channel vertical D-MOS logic level FET@en-us TO-236 3-Pin	active
NXP Semiconductors	BSH202 T/R		P-channel enhancement mode MOS transistor - Configuration: Single P-channel ; I_D DC: 0.52 A; Q_gd (typ): 0.5 nC; R_DS(on): 900@10V1350@4.5V mOhm; V_DSmax: 30 V	compliant no active
Nexperia	BSH202,235		BSH202 - P-channel vertical D-MOS logic level FET@en-us TO-236 3-Pin	active
NXP Semiconductors	BSH203 T/R		P-channel enhancement mode MOS transistor - Configuration: Single P-channel ; I_D DC: 0.47 A; Q_gd (typ): 0.25 nC; R_DS(on): 900@4.5V1100@2.5V mOhm; V_DSmax: 30 V	compliant no active
Nexperia	BSH203,235		BSH203; BSH205 - P-channel vertical D-MOS logic level FET@en-us TO-236 3-Pin	active
NXP Semiconductors	BSH205 T/R		P-channel enhancement mode MOS transistor - Configuration: Single P-channel ; I_D DC: 0.75 A; Q_gd (typ): 1 nC; R_DS(on): 400@4.5V500@2.5V mOhm; V_DSmax: 12 V	compliant no active
NXP Semiconductors	BSH205,235		P-channel vertical D-MOS logic level FET TO-236 3-Pin	active
Nexperia	BSH205,235		BSH203; BSH205 - P-channel vertical D-MOS logic level FET@en-us TO-236 3-Pin	obsolete
NXP Semiconductors	BSH205G2VL		BSH205G2 - 20 V, P-channel Trench MOSFET TO-236 3-Pin	transferred
NXP Semiconductors	BSH207 /T3		P-channel enhancement mode MOS transistor - Configuration: Single P-channel ; I_D DC: 1.52 A; Q_gd (typ): 2 nC; R_DS(on): 120@4.5V150@2.5V mOhm; V_DSmax: 12 V	compliant no active

BSH3-0-R Manufacturer

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