| Manufacturer |
Part # |
Datasheet Date Size |
Description |
Rohs Pb Free Lifecycle |
Direct Link |
 NXP Semiconductors
|
BF1100 T/R
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Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; Y
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compliant no active |
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BF1100R T/R
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Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; Y
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compliant no active |
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BF1100R,235
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Dual-gate MOS-FETs, SOT143R Package, Standard Marking, Reel Pack, SMD, Low Profile, Large
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compliant yes obsolete |
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BF1100WR T/R
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Dual-gate MOS-FET - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; Y<
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compliant no active |
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BF1101,215
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N-channel dual-gate MOS-FETs, SOT143B Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel
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compliant yes obsolete |
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BF1101WR T/R
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N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.:
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compliant no active |
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BF1101WR,135
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N-channel dual-gate MOSFET
|
compliant
obsolete |
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BF1102,115
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N-channel dual-gate MOSFET TSSOP 6-Pin
|
compliant
obsolete |
|
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BF1102R T/R
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Dual N-channel dual gate MOS-FETs - CIS TYP: 2.8 pF; COS: 1.6 pF; ID: 40 mA; IDSS: 12 to 20 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS
|
compliant no active |
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BF1102R,135
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N-channel dual-gate MOSFET TSSOP 6-Pin
|
compliant
obsolete |
|
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BF1105,215
|
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N-channel dual-gate MOSFET SOT-143 4-Pin
|
compliant
obsolete |
|
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BF1105WR T/R
|
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N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1.2 V; VDSmax: 7 V; YFS min.
|
compliant no active |
|
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BF1105WR,135
|
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N-channel dual-gate MOSFET
|
compliant
obsolete |
|
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BF1107,215
|
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BF1107 - MOSFET N-channel switching transistor TO-236 3-Pin
|
compliant
obsolete |
|
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BF1107,235
|
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BF1107 - MOSFET N-channel switching transistor TO-236 3-Pin
|
compliant
obsolete |
|
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BF1107/A2,215
|
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BF1107 - MOSFET N-channel switching transistor TO-236 3-Pin
|
obsolete |
|
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BF1108,215
|
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Silicon RF switches SOT-143 4-Pin
|
compliant
obsolete |
|
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BF1108/L,215
|
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Silicon RF switches SOT-143 4-Pin
|
active |
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BF1108R T/R
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Silicon RF switches - [S21(Off)]2 min: 30 ; [S21(On)]2 max: 3 ; ID: 10 mA; IGSS max: 100 nA; Mode: depl. ; RDS(on): 20 Ohm; S21(off): 30 dB; S21(on): 3 dB;
|
compliant no active |
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BF1108R,235
|
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Silicon RF switches SOT-143 4-Pin
|
compliant
obsolete |
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